The detailed switching process of Cascode GaN power devices is very complicated, the switching process and power loss directly affect the design, application, and modeling in stages of the device. It is difficult to analyze the switching performance of the internal devices because the devices were packaged into modules. Therefore, the same type of depletion GaN transistor and low-voltage Si MOS transistor were used to build external cascaded GaN power devices to detect the drain voltage of low-voltage Si MOS transistor in the process of double pulse switching, so as to analyze switching process of the depletion GaN transistor and low-voltage Si MOS transistors and the influence of their parasitic parameters on the switching characteristics of MOS transistors. The switching loss calculation model of GaN power devices considering the parasitic capacitance was derived. By using the actual Cascode GaN power device, the hardware platform for testing the switching characteristics of the device was built to study the influence of different driving network parameters on the switching characteristics. The experimental results verify the correctness of the analysis method in this paper.
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