The detailed switching process of Cascode GaN power devices is very complicated, the switching process and power loss directly affect the design, application, and modeling in stages of the device. It is difficult to analyze the switching performance of the internal devices because the devices were packaged into modules. Therefore, the same type of depletion GaN transistor and low-voltage Si MOS transistor were used to build external cascaded GaN power devices to detect the drain voltage of low-voltage Si MOS transistor in the process of double pulse switching, so as to analyze switching process of the depletion GaN transistor and low-voltage Si MOS transistors and the influence of their parasitic parameters on the switching characteristics of MOS transistors. The switching loss calculation model of GaN power devices considering the parasitic capacitance was derived. By using the actual Cascode GaN power device, the hardware platform for testing the switching characteristics of the device was built to study the influence of different driving network parameters on the switching characteristics. The experimental results verify the correctness of the analysis method in this paper.
张延斌，王荣华，朱景伟，梁壮，任永硕，熊华燕. Cascode型GaN功率器件的开关过程及损耗分析[J]. 大连海事大学学报, 2020, 46(2): 120-127.
ZHANG Yan-bin，WANG Rong-hua，ZHU Jing-wei，LIANG Zhuang，REN Yong-shuo，XIONG Hua-yan. Switching process and loss analysis of Cascode GaN power device[J].Journal of Dalian Maritime University, 2020, 46(2): 120-127.
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